Novel Quadruple Cross-Coupled Memory Cell Designs With Protection Against Single Event Upsets and Double-Node Upsets

Novel Quadruple Cross-Coupled Memory Cell Designs With Protection Against Single Event Upsets and Double-Node Upsets

This paper presents two novel quadruple cross-coupled memory cell designs, namely QCCM10T and QCCM12T, with protection against single event upsets (SEUs) and double-node upsets (DNUs). First, the QCCM10T cell consisting of four cross-coupled input-split inverters is proposed. The cell achieves full...

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Bibliographic Details
Main Authors: Aibin Yan, Jun Zhou, Yuanjie Hu, Jie Cui, Zhengfeng Huang, Patrick Girard, Xiaoqing Wen
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Access
Subjects:
Double-node upset
memory cell
radiation hardening
single event upset
soft error
Online Access:https://ieeexplore.ieee.org/document/8926454/

Internet

https://ieeexplore.ieee.org/document/8926454/

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