Theoretical investigation of the interface fluctuation causing low channel conductivity at SiO2/SiC interfaces through the self-energy and average Green’s function
The low channel mobility and the high interface state density at SiO2/SiC interfaces is quantitatively explained by introducing potential fluctuation at interfaces. The density of states with the perturbation potential is calculated through the self-energy and average Green’s function, and the inter...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2019-07-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5098989 |