Enhanced Responsivity of GaN Metal–Semiconductor–Metal (MSM) Photodetectors on GaN Substrate
High spectra response of metal-semiconductor-metal (MSM) ultraviolet photodetectors (UV PDs) based on GaN epitaxial wafers with different diameters of Al nanodots on the surface were realized on free-standing GaN substrates. The UV PDs exhibit low dark current and high spectral response both at room...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2017-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7888933/ |