Excitation Intensity and Temperature-Dependent Performance of InGaN/GaN Multiple Quantum Wells Photodetectors
In this article, we investigate the behavior of InGaN–GaN Multiple Quantum Well (MQW) photodetectors under different excitation density (616 µW/cm<sup>2</sup> to 7.02 W/cm<sup>2</sup>) and temperature conditions (from 25 °C to 65 °C), relating the experimental results to carr...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-11-01
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| Series: | Electronics |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-9292/9/11/1840 |