UV-Vis studies of 800 keV Ar ion irradiated NiO thin films

We report the evolution of optical absorption properties of 800 keV Ar ion irradiated NiO thin films through UV-Vis characterization. Our results indicate the existence of both Mott-Hubbard (d → d transition) and charge-transfer (p → d transition) characteristic of NiO. The optical band gap of NiO i...

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Bibliographic Details
Main Authors: Mallick P., Mishra D.K., Kumar P., Kanjilal D.
Format: Article
Language:English
Published: Sciendo 2015-09-01
Series:Materials Science-Poland
Subjects:
Online Access:http://www.degruyter.com/view/j/msp.2015.33.issue-3/msp-2015-0082/msp-2015-0082.xml?format=INT