Effects of ion beams on flash memory cells

This paper deals with the flash memory reliability in terms of the ionizing radiation effects. In fact, the reliability of flash memory depends on physico-chemical restrictions of electrostatic nature due to the effects of ionizing radiation. The presented results are actual as a high degre...

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Bibliographic Details
Main Authors: Obrenović Marija D., Lazarević Đorđe R., Dolićanin Edin Ć., Vujisić Miloš Lj.
Format: Article
Language:English
Published: VINCA Institute of Nuclear Sciences 2014-01-01
Series:Nuclear Technology and Radiation Protection
Subjects:
Online Access:http://www.doiserbia.nb.rs/img/doi/1451-3994/2014/1451-39941402116O.pdf