Effects of ion beams on flash memory cells

• Main Authors: Obrenović Marija D., Lazarević Đorđe R., Dolićanin Edin Ć., Vujisić Miloš Lj.
• Format: Article
• Language: English
• Published: VINCA Institute of Nuclear Sciences 2014-01-01
• Series: Nuclear Technology and Radiation Protection
• Subjects: flash memory; radiation hardness; Monte-Carlo simulation
• Online Access: http://www.doiserbia.nb.rs/img/doi/1451-3994/2014/1451-39941402116O.pdf

This paper deals with the flash memory reliability in terms of the ionizing radiation effects. In fact, the reliability of flash memory depends on physico-chemical restrictions of electrostatic nature due to the effects of ionizing radiation. The presented results are actual as a high degree of integrated components miniaturization affects the memory sensitivity, while the role of memories in the solar cells management system for space flights is increasing, so that the effects of ionizing radiation may cause changes in the stored data or the physical destruction of the flash memory components. [Projekat Ministarstva nauke Republike Srbije, br.171007]