Effects of ion beams on flash memory cells
This paper deals with the flash memory reliability in terms of the ionizing radiation effects. In fact, the reliability of flash memory depends on physico-chemical restrictions of electrostatic nature due to the effects of ionizing radiation. The presented results are actual as a high degre...
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doaj-f47b48fc4464427aa2fbd4b4338d79a72020-11-24T21:31:58ZengVINCA Institute of Nuclear SciencesNuclear Technology and Radiation Protection1451-39942014-01-0129211612210.2298/NTRP1402116O1451-39941402116OEffects of ion beams on flash memory cellsObrenović Marija D.0Lazarević Đorđe R.1Dolićanin Edin Ć.2Vujisić Miloš Lj.3Faculty of Electrical Engineering, BelgradeVinča Institute of Nuclear Sciences, BelgradeState University of Novi Pazar, Novi PazarFaculty of Electrical Engineering, BelgradeThis paper deals with the flash memory reliability in terms of the ionizing radiation effects. In fact, the reliability of flash memory depends on physico-chemical restrictions of electrostatic nature due to the effects of ionizing radiation. The presented results are actual as a high degree of integrated components miniaturization affects the memory sensitivity, while the role of memories in the solar cells management system for space flights is increasing, so that the effects of ionizing radiation may cause changes in the stored data or the physical destruction of the flash memory components. [Projekat Ministarstva nauke Republike Srbije, br.171007]http://www.doiserbia.nb.rs/img/doi/1451-3994/2014/1451-39941402116O.pdfflash memoryradiation hardnessMonte-Carlo simulation |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Obrenović Marija D. Lazarević Đorđe R. Dolićanin Edin Ć. Vujisić Miloš Lj. |
spellingShingle |
Obrenović Marija D. Lazarević Đorđe R. Dolićanin Edin Ć. Vujisić Miloš Lj. Effects of ion beams on flash memory cells Nuclear Technology and Radiation Protection flash memory radiation hardness Monte-Carlo simulation |
author_facet |
Obrenović Marija D. Lazarević Đorđe R. Dolićanin Edin Ć. Vujisić Miloš Lj. |
author_sort |
Obrenović Marija D. |
title |
Effects of ion beams on flash memory cells |
title_short |
Effects of ion beams on flash memory cells |
title_full |
Effects of ion beams on flash memory cells |
title_fullStr |
Effects of ion beams on flash memory cells |
title_full_unstemmed |
Effects of ion beams on flash memory cells |
title_sort |
effects of ion beams on flash memory cells |
publisher |
VINCA Institute of Nuclear Sciences |
series |
Nuclear Technology and Radiation Protection |
issn |
1451-3994 |
publishDate |
2014-01-01 |
description |
This paper deals with the flash memory reliability in terms of the ionizing
radiation effects. In fact, the reliability of flash memory depends on
physico-chemical restrictions of electrostatic nature due to the effects of
ionizing radiation. The presented results are actual as a high degree of
integrated components miniaturization affects the memory sensitivity, while
the role of memories in the solar cells management system for space flights
is increasing, so that the effects of ionizing radiation may cause changes in
the stored data or the physical destruction of the flash memory components.
[Projekat Ministarstva nauke Republike Srbije, br.171007] |
topic |
flash memory radiation hardness Monte-Carlo simulation |
url |
http://www.doiserbia.nb.rs/img/doi/1451-3994/2014/1451-39941402116O.pdf |
work_keys_str_mv |
AT obrenovicmarijad effectsofionbeamsonflashmemorycells AT lazarevicđorđer effectsofionbeamsonflashmemorycells AT dolicaninedinc effectsofionbeamsonflashmemorycells AT vujisicmiloslj effectsofionbeamsonflashmemorycells |
_version_ |
1725959202190393344 |