A Hybrid Non-destructive Measuring Method of Three-dimensional Profile of Through Silicon Vias for Realization of Smart Devices

A Hybrid Non-destructive Measuring Method of Three-dimensional Profile of Through Silicon Vias for Realization of Smart Devices

Abstract Smart devices have been fabricated based on design concept of multiple layer structures which require through silicon vias to transfer electric signals between stacked layers. Because even a single defect leads to fail of the packaged devices, the dimensions of the through silicon vias are...

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Bibliographic Details
Main Authors: Heulbi Ahn, Jaeseok Bae, Jungjae Park, Jonghan Jin
Format: Article
Language:English
Published: Nature Publishing Group 2018-10-01
Series:Scientific Reports
Subjects:
Through-silicon Vias (TSV)
Three-dimensional Profile
Major Uncertainty Components
Optical Path Difference (OPD)
International Standard Guidelines
Online Access:https://doi.org/10.1038/s41598-018-33728-w

Internet

https://doi.org/10.1038/s41598-018-33728-w

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