Optimization of Ohmic Contacts to p-GaAs Nanowires

Optimization of Ohmic Contacts to p-GaAs Nanowires

Abstract The performance of Ohmic contacts applied to semiconductor nanowires (NWs) is an important aspect for enabling their use in electronic or optoelectronic devices. Due to the small dimensions and specific surface orientation of NWs, the standard processing technology widely developed for plan...

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Bibliographic Details
Main Authors: Marcelo Rizzo Piton, Teemu Hakkarainen, Joonas Hilska, Eero Koivusalo, Donald Lupo, Helder Vinicius Avanço Galeti, Yara Galvão Gobato, Mircea Guina
Format: Article
Language:English
Published: SpringerOpen 2019-11-01
Series:Nanoscale Research Letters
Subjects:
Nanowires
GaAs
p-type doping
Ohmic contacts
Online Access:http://link.springer.com/article/10.1186/s11671-019-3175-8

Internet

http://link.springer.com/article/10.1186/s11671-019-3175-8

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