A UV-enhanced, self-powered detector with graphene p–n junction grown in situ on SiC(0001) with periodic boron ion modulation

A UV-enhanced, self-powered detector with graphene p–n junction grown in situ on SiC(0001) with periodic boron ion modulation

Graphene p–n junctions hold great potential in the fields of electronic and optoelectronic devices. Here, we develop a scheme of the in situ growth of an epitaxial graphene (EG) lateral p–n junction on a semi-insulating SiC (0001) substrate with periodic boron ion implantation, and utilizing the adv...

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Bibliographic Details
Main Authors: Yunlong Guo, Liwei Guo, Kaiyao Zhou, Junwei Yang, Zhi Xu, Xuedong Bai
Format: Article
Language:English
Published: AIP Publishing LLC 2021-08-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0056129

Internet

http://dx.doi.org/10.1063/5.0056129

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