The effect of V/III ratio on the morphology and structure of GaAs nanowires by MOCVD
In this paper, GaAs nanowires with different V/III ratios (70, 140, 280 and 560) were vertically grown from bottom to top on GaAs substrates by using metal organic chemical vapor deposition based on gold assisted vapor-liquid-solid mechanism. It is found that the growth rate of nanowires is inversel...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-05-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5028350 |