Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations

Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations

<p>Abstract</p> <p>We report structural analysis of completely relaxed GaSb epitaxial layers deposited monolithically on GaAs substrates using interfacial misfit (IMF) array growth mode. Unlike the traditional tetragonal distortion approach, strain due to the lattice mismatch is sp...

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Bibliographic Details
Main Authors: Balakrishnan G, Rotter TJ, Dawson LR, Nunna K, Liang BL, Huang SH, Jallipalli A, Huffaker DL
Format: Article
Language:English
Published: SpringerOpen 2009-01-01
Series:Nanoscale Research Letters
Subjects:
Semiconductor
GaSb/GaAs
Molecular beam epitaxy
Interfacial misfit dislocations (IMF) or Lomer dislocations
Strain relief
Structural properties
Moir&#233; fringes
Online Access:http://dx.doi.org/10.1007/s11671-009-9420-9

Internet

http://dx.doi.org/10.1007/s11671-009-9420-9

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