Cascade Type-I Quantum Well GaSb-Based Diode Lasers

Cascade Type-I Quantum Well GaSb-Based Diode Lasers

Cascade pumping of type-I quantum well gain sections was utilized to increase output power and efficiency of GaSb-based diode lasers operating in a spectral region from 1.9 to 3.3 μm. Carrier recycling between quantum well gain stages was realized using band-to-band tunneling in GaSb/AlSb/InAs heter...

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Bibliographic Details
Main Authors: Leon Shterengas, Gela Kipshidze, Takashi Hosoda, Meng Wang, Tao Feng, Gregory Belenky
Format: Article
Language:English
Published: MDPI AG 2016-05-01
Series:Photonics
Subjects:
high power
mid-infrared
diode laser
antimonide
type-I quantum well
cascade
Online Access:http://www.mdpi.com/2304-6732/3/2/27

Internet

http://www.mdpi.com/2304-6732/3/2/27

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