Combination of Plasma Electrolytic Processing and Mechanical Polishing for Single-Crystal 4H-SiC
Single-crystal 4H-SiC is a typical third-generation semiconductor power-device material because of its excellent electronic and thermal properties. A novel polishing technique that combines plasma electrolytic processing and mechanical polishing (PEP-MP) was proposed in order to polish single-crysta...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-05-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/12/6/606 |