Single crystals of bismuth silicon oxide grown by the czochralski technique and their characterisation

Single crystals of Bi12SiO20 were grown by the Czochralski technique. The critical diameter and the critical rate of rotation were calculated. Suitable polishing and etching solutions were determined. X-Ray measurements were performed on powdered samples to obtain the lattice parameters. Th...

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Bibliographic Details
Main Authors: Golubović Aleksandar, Nikolić Slobodanka, Gajić Radoš, Đurić Stevan, Valčić Andreja
Format: Article
Language:English
Published: Serbian Chemical Society 1999-01-01
Series:Journal of the Serbian Chemical Society
Subjects:
Online Access:http://www.doiserbia.nb.rs/img/doi/0352-5139/1999/0352-51399909553G.pdf