Design of flexible inorganic BiFe0.93Mn0.07O3 ferroelectric thin films for nonvolatile memory

Flexible ferroelectric memories, endowing with high data storage density, provide a chance for the next-generation wearable electronics. Here, flexible inorganic Mn-doped BiFeO3 thin films were directly integrated on fluorophlogopite mica (F-Mica) substrates by an easy and low-cost all solution chem...

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Bibliographic Details
Main Authors: Bingbing Yang, Chenhui Li, Miao Liu, Renhuai Wei, Xianwu Tang, Ling Hu, Wenhai Song, Xuebin Zhu, Yuping Sun
Format: Article
Language:English
Published: Elsevier 2020-09-01
Series:Journal of Materiomics
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S2352847820300368