A GaN-HEMT Compact Model Including Dynamic <i>R</i><sub>DSon</sub> Effect for Power Electronics Converters

A GaN-HEMT Compact Model Including Dynamic <i>R</i><sub>DSon</sub> Effect for Power Electronics Converters

In order to model GaN-HEMT switching transients and determine power losses, a compact model including dynamic <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><semantics><msub><mi>R</mi><mi mathvariant="...

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Bibliographic Details
Main Authors: Ke Li, Paul Leonard Evans, Christopher Mark Johnson, Arnaud Videt, Nadir Idir
Format: Article
Language:English
Published: MDPI AG 2021-04-01
Series:Energies
Subjects:
GaN-HEMT
dynamic <i>R</i><sub>DSon</sub>
power electronics
compact model
simulation
switching transients
Online Access:https://www.mdpi.com/1996-1073/14/8/2092

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https://www.mdpi.com/1996-1073/14/8/2092

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