Electron transport coefficients in binary mixtures of tetramethylsilane gas with Kr, Xe, He and Ne gases

Electron transport coefficients in binary mixtures of tetramethylsilane gas with Kr, Xe, He and Ne gases

Tetramethylsilane, alone and in combination with inert gases are widely used in various material processing. The electron transport coefficients in binary mixtures tetramethylsilane gas with buffer gases such as Kr, Xe, He, and Ne gases, therefore, was firstly calculated and analyzed by a two-term a...

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Main Authors: Thi Tuoi Phan, Xuan Hien Pham, Anh Tuan Do
Format: Article
Language:English
Published: EDP Sciences 2018-01-01
Series:MATEC Web of Conferences
Online Access:https://doi.org/10.1051/matecconf/201818911006
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spelling doaj-f7a753979c594b99b6b361298ac9cf4f2021-02-02T03:58:00ZengEDP SciencesMATEC Web of Conferences2261-236X2018-01-011891100610.1051/matecconf/201818911006matecconf_meamt2018_11006Electron transport coefficients in binary mixtures of tetramethylsilane gas with Kr, Xe, He and Ne gasesThi Tuoi PhanXuan Hien PhamAnh Tuan DoTetramethylsilane, alone and in combination with inert gases are widely used in various material processing. The electron transport coefficients in binary mixtures tetramethylsilane gas with buffer gases such as Kr, Xe, He, and Ne gases, therefore, was firstly calculated and analyzed by a two-term approximation of the Boltzmann equation in the E/N (ratio of the electric field E to the neutral number density) range of 0.1-1000 Td (Townsend). These results can be considered to use in many industrial applications depending on particular application of gas, especially on plasma polymerization and plasma enhanced chemical vapour deposition.https://doi.org/10.1051/matecconf/201818911006
collection DOAJ
language English
format Article
sources DOAJ
author Thi Tuoi Phan
Xuan Hien Pham
Anh Tuan Do
spellingShingle Thi Tuoi Phan
Xuan Hien Pham
Anh Tuan Do
Electron transport coefficients in binary mixtures of tetramethylsilane gas with Kr, Xe, He and Ne gases
MATEC Web of Conferences
author_facet Thi Tuoi Phan
Xuan Hien Pham
Anh Tuan Do
author_sort Thi Tuoi Phan
title Electron transport coefficients in binary mixtures of tetramethylsilane gas with Kr, Xe, He and Ne gases
title_short Electron transport coefficients in binary mixtures of tetramethylsilane gas with Kr, Xe, He and Ne gases
title_full Electron transport coefficients in binary mixtures of tetramethylsilane gas with Kr, Xe, He and Ne gases
title_fullStr Electron transport coefficients in binary mixtures of tetramethylsilane gas with Kr, Xe, He and Ne gases
title_full_unstemmed Electron transport coefficients in binary mixtures of tetramethylsilane gas with Kr, Xe, He and Ne gases
title_sort electron transport coefficients in binary mixtures of tetramethylsilane gas with kr, xe, he and ne gases
publisher EDP Sciences
series MATEC Web of Conferences
issn 2261-236X
publishDate 2018-01-01
description Tetramethylsilane, alone and in combination with inert gases are widely used in various material processing. The electron transport coefficients in binary mixtures tetramethylsilane gas with buffer gases such as Kr, Xe, He, and Ne gases, therefore, was firstly calculated and analyzed by a two-term approximation of the Boltzmann equation in the E/N (ratio of the electric field E to the neutral number density) range of 0.1-1000 Td (Townsend). These results can be considered to use in many industrial applications depending on particular application of gas, especially on plasma polymerization and plasma enhanced chemical vapour deposition.
url https://doi.org/10.1051/matecconf/201818911006
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