Improved Performance of GaN-Based Light-Emitting Diodes Grown on Si (111) Substrates with NH<sub>3</sub> Growth Interruption

Improved Performance of GaN-Based Light-Emitting Diodes Grown on Si (111) Substrates with NH<sub>3</sub> Growth Interruption

We demonstrate the highly efficient, GaN-based, multiple-quantum-well light-emitting diodes (LEDs) grown on Si (111) substrates embedded with the AlN buffer layer using NH<sub>3</sub> growth interruption. Analysis of the materials by the X-ray diffraction omega scan and transmission elec...

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Bibliographic Details
Main Authors: Sang-Jo Kim, Semi Oh, Kwang-Jae Lee, Sohyeon Kim, Kyoung-Kook Kim
Format: Article
Language:English
Published: MDPI AG 2021-04-01
Series:Micromachines
Subjects:
AlN buffer layer
NH<sub>3</sub> growth interruption
strain relaxation
GaN-based LED
low defect density
Online Access:https://www.mdpi.com/2072-666X/12/4/399

Internet

https://www.mdpi.com/2072-666X/12/4/399

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