Estimation of the MQW InGaAs/GaAs heterostructures stability to the formation of misfit dislocations
The stable, metastable and unstable regions of InGaAs/GaAs heterostructures to the formation of misfit dislocations were determined. The character of the strain distribution in the investigating samples has been estimated and the excess stress change in the quantum wells and barrier layers has been...
| Main Authors: | , , |
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| Format: | Article |
| Language: | Russian |
| Published: |
MIREA - Russian Technological University
2006-12-01
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| Series: | Тонкие химические технологии |
| Online Access: | https://www.finechem-mirea.ru/jour/article/view/1456 |