RBER-Aware Lifetime Prediction Scheme for 3D-TLC NAND Flash Memory

RBER-Aware Lifetime Prediction Scheme for 3D-TLC NAND Flash Memory

NAND flash memory is widely used in various computing systems. However, flash blocks can sustain only a limited number of program/erase (P/E) cycles, which are referred to as the endurance. On one hand, in order to ensure data integrity, flash manufacturers often define the maximum P/E cycles of the...

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Bibliographic Details
Main Authors: Ruixiang Ma, Fei Wu, Meng Zhang, Zhonghai Lu, Jiguang Wan, Changsheng Xie
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Access
Subjects:
NAND flash
P/E cycle
retention time
RBER
machine learning
Online Access:https://ieeexplore.ieee.org/document/8682045/

Internet

https://ieeexplore.ieee.org/document/8682045/

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