Diameter-driven crossover in resistive behaviour of heavily doped self-seeded germanium nanowires

Diameter-driven crossover in resistive behaviour of heavily doped self-seeded germanium nanowires

The dependence of the resistivity with changing diameter of heavily-doped self-seeded germanium nanowires was studied for the diameter range 40 to 11 nm. The experimental data reveal an initial strong reduction of the resistivity with diameter decrease. At about 20 nm a region of slowly varying resi...

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Bibliographic Details
Main Authors: Stephen Connaughton, Maria Koleśnik-Gray, Richard Hobbs, Olan Lotty, Justin D. Holmes, Vojislav Krstić
Format: Article
Language:English
Published: Beilstein-Institut 2016-09-01
Series:Beilstein Journal of Nanotechnology
Subjects:
diameter-dependence
germanium
nanowire
resistivity
self-seeded
Online Access:https://doi.org/10.3762/bjnano.7.119

Internet

https://doi.org/10.3762/bjnano.7.119

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