Effect of Si and SiO2 Substrates on the Geometries of As-Grown Carbon Coils

Carbon coils could be synthesized using C2H2/H2 as source gases and SF6 as an incorporated additive gas under thermal chemical vapor deposition system. Si substrate, SiO2 thin film deposited Si substrate (SiO2 substrate), and quartz substrate were employed to elucidate the effect of substrate on the...

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Main Authors: Semi Park, Sung-Hoon Kim, Tae-Gyu Kim
Format: Article
Language:English
Published: Hindawi Limited 2012-01-01
Series:Journal of Nanomaterials
Online Access:http://dx.doi.org/10.1155/2012/389248
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spelling doaj-f817e7c9e1554f19b82a0a208d4cd43d2020-11-24T23:15:16ZengHindawi LimitedJournal of Nanomaterials1687-41101687-41292012-01-01201210.1155/2012/389248389248Effect of Si and SiO2 Substrates on the Geometries of As-Grown Carbon CoilsSemi Park0Sung-Hoon Kim1Tae-Gyu Kim2Department of Engineering in Energy and Applied Chemistry, Silla University, Busan 617-736, Republic of KoreaDepartment of Engineering in Energy and Applied Chemistry, Silla University, Busan 617-736, Republic of KoreaDepartment of Nanomechatronics Engineering, Pusan National University, Kyungnam 627-706, Republic of KoreaCarbon coils could be synthesized using C2H2/H2 as source gases and SF6 as an incorporated additive gas under thermal chemical vapor deposition system. Si substrate, SiO2 thin film deposited Si substrate (SiO2 substrate), and quartz substrate were employed to elucidate the effect of substrate on the formation of carbon coils. The characteristics (formation densities, morphologies, and geometries) of the deposited carbon coils on the substrate were investigated. In case of Si substrate, the microsized carbon coils were dominant on the substrate surface. While, in case of SiO2 substrate, the nanosized carbon coils were prevailing on the substrate surface. The surface morphologies of samples were investigated step by step during the reaction process. The cause for the different geometry formation of carbon coils according to the different substrates was discussed in association with the different thermal expansion coefficient values of Si and SiO2 substrates and the different etched characteristics of Si and SiO2 substrates by SF6 + H2 flow.http://dx.doi.org/10.1155/2012/389248
collection DOAJ
language English
format Article
sources DOAJ
author Semi Park
Sung-Hoon Kim
Tae-Gyu Kim
spellingShingle Semi Park
Sung-Hoon Kim
Tae-Gyu Kim
Effect of Si and SiO2 Substrates on the Geometries of As-Grown Carbon Coils
Journal of Nanomaterials
author_facet Semi Park
Sung-Hoon Kim
Tae-Gyu Kim
author_sort Semi Park
title Effect of Si and SiO2 Substrates on the Geometries of As-Grown Carbon Coils
title_short Effect of Si and SiO2 Substrates on the Geometries of As-Grown Carbon Coils
title_full Effect of Si and SiO2 Substrates on the Geometries of As-Grown Carbon Coils
title_fullStr Effect of Si and SiO2 Substrates on the Geometries of As-Grown Carbon Coils
title_full_unstemmed Effect of Si and SiO2 Substrates on the Geometries of As-Grown Carbon Coils
title_sort effect of si and sio2 substrates on the geometries of as-grown carbon coils
publisher Hindawi Limited
series Journal of Nanomaterials
issn 1687-4110
1687-4129
publishDate 2012-01-01
description Carbon coils could be synthesized using C2H2/H2 as source gases and SF6 as an incorporated additive gas under thermal chemical vapor deposition system. Si substrate, SiO2 thin film deposited Si substrate (SiO2 substrate), and quartz substrate were employed to elucidate the effect of substrate on the formation of carbon coils. The characteristics (formation densities, morphologies, and geometries) of the deposited carbon coils on the substrate were investigated. In case of Si substrate, the microsized carbon coils were dominant on the substrate surface. While, in case of SiO2 substrate, the nanosized carbon coils were prevailing on the substrate surface. The surface morphologies of samples were investigated step by step during the reaction process. The cause for the different geometry formation of carbon coils according to the different substrates was discussed in association with the different thermal expansion coefficient values of Si and SiO2 substrates and the different etched characteristics of Si and SiO2 substrates by SF6 + H2 flow.
url http://dx.doi.org/10.1155/2012/389248
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AT sunghoonkim effectofsiandsio2substratesonthegeometriesofasgrowncarboncoils
AT taegyukim effectofsiandsio2substratesonthegeometriesofasgrowncarboncoils
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