Time Dependent Dielectric Breakdown in Copper Low-k Interconnects: Mechanisms and Reliability Models
The time dependent dielectric breakdown phenomenon in copper low-k damascene interconnects for ultra large-scale integration is reviewed. The loss of insulation between neighboring interconnects represents an emerging back end-of-the-line reliability issue that is not fully understood. After describ...
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| Format: | Article |
| Language: | English |
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MDPI AG
2012-09-01
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| Series: | Materials |
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| Online Access: | http://www.mdpi.com/1996-1944/5/9/1602 |