Effect of Back-Gate Voltage on the High-Frequency Performance of Dual-Gate MoS<sub>2</sub> Transistors
As an atomically thin semiconductor, 2D molybdenum disulfide (MoS<sub>2</sub>) has demonstrated great potential in realizing next-generation logic circuits, radio-frequency (RF) devices and flexible electronics. Although various methods have been performed to improve the high-frequency c...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-06-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/11/6/1594 |