Effect of Back-Gate Voltage on the High-Frequency Performance of Dual-Gate MoS<sub>2</sub> Transistors

As an atomically thin semiconductor, 2D molybdenum disulfide (MoS<sub>2</sub>) has demonstrated great potential in realizing next-generation logic circuits, radio-frequency (RF) devices and flexible electronics. Although various methods have been performed to improve the high-frequency c...

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Main Authors:	Qingguo Gao, Chongfu Zhang, Ping Liu, Yunfeng Hu, Kaiqiang Yang, Zichuan Yi, Liming Liu, Xinjian Pan, Zhi Zhang, Jianjun Yang, Feng Chi
Format:	Article
Language:	English
Published:	MDPI AG 2021-06-01
Series:	Nanomaterials
Subjects:	MoS<sub>2</sub> radio-frequency transistors contact resistance dual-gate
Online Access:	https://www.mdpi.com/2079-4991/11/6/1594

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record_format	Article
spelling	doaj-f8af61ceff684926806a19eca97b35f62021-07-01T00:27:22ZengMDPI AGNanomaterials2079-49912021-06-01111594159410.3390/nano11061594Effect of Back-Gate Voltage on the High-Frequency Performance of Dual-Gate MoS<sub>2</sub> TransistorsQingguo Gao0Chongfu Zhang1Ping Liu2Yunfeng Hu3Kaiqiang Yang4Zichuan Yi5Liming Liu6Xinjian Pan7Zhi Zhang8Jianjun Yang9Feng Chi10School of Electronic Information, University of Electronic Science and Technology of China Zhongshan Institute, Zhongshan 528402, ChinaSchool of Electronic Information, University of Electronic Science and Technology of China Zhongshan Institute, Zhongshan 528402, ChinaSchool of Electronic Information, University of Electronic Science and Technology of China Zhongshan Institute, Zhongshan 528402, ChinaSchool of Electronic Information, University of Electronic Science and Technology of China Zhongshan Institute, Zhongshan 528402, ChinaSchool of Electronic Information, University of Electronic Science and Technology of China Zhongshan Institute, Zhongshan 528402, ChinaSchool of Electronic Information, University of Electronic Science and Technology of China Zhongshan Institute, Zhongshan 528402, ChinaSchool of Electronic Information, University of Electronic Science and Technology of China Zhongshan Institute, Zhongshan 528402, ChinaSchool of Electronic Information, University of Electronic Science and Technology of China Zhongshan Institute, Zhongshan 528402, ChinaSchool of Electronic Information, University of Electronic Science and Technology of China Zhongshan Institute, Zhongshan 528402, ChinaSchool of Electronic Information, University of Electronic Science and Technology of China Zhongshan Institute, Zhongshan 528402, ChinaSchool of Electronic Information, University of Electronic Science and Technology of China Zhongshan Institute, Zhongshan 528402, ChinaAs an atomically thin semiconductor, 2D molybdenum disulfide (MoS<sub>2</sub>) has demonstrated great potential in realizing next-generation logic circuits, radio-frequency (RF) devices and flexible electronics. Although various methods have been performed to improve the high-frequency characteristics of MoS<sub>2</sub> RF transistors, the impact of the back-gate bias on dual-gate MoS<sub>2</sub> RF transistors is still unexplored. In this work, we study the effect of back-gate control on the static and RF performance metrics of MoS<sub>2</sub> high-frequency transistors. By using high-quality chemical vapor deposited bilayer MoS<sub>2</sub> as channel material, high-performance top-gate transistors with on/off ratio of 10<sup>7</sup> and on-current up to 179 μA/μm at room temperature were realized. With the back-gate modulation, the source and drain contact resistances decrease to 1.99 kΩ∙μm at <i>V</i><sub>bg</sub> = 3 V, and the corresponding on-current increases to 278 μA/μm. Furthermore, both cut-off frequency and maximum oscillation frequency improves as the back-gate voltage increases to 3 V. In addition, a maximum intrinsic <i>f</i><sub>max</sub> of 29.7 GHz was achieved, which is as high as 2.1 times the <i>f</i><sub>max</sub> without the back-gate bias. This work provides significant insights into the influence of back-gate voltage on MoS<sub>2</sub> RF transistors and presents the potential of dual-gate MoS<sub>2</sub> RF transistors for future high-frequency applications.https://www.mdpi.com/2079-4991/11/6/1594MoS<sub>2</sub>radio-frequency transistorscontact resistancedual-gate
collection	DOAJ
language	English
format	Article
sources	DOAJ
author	Qingguo Gao Chongfu Zhang Ping Liu Yunfeng Hu Kaiqiang Yang Zichuan Yi Liming Liu Xinjian Pan Zhi Zhang Jianjun Yang Feng Chi
spellingShingle	Qingguo Gao Chongfu Zhang Ping Liu Yunfeng Hu Kaiqiang Yang Zichuan Yi Liming Liu Xinjian Pan Zhi Zhang Jianjun Yang Feng Chi Effect of Back-Gate Voltage on the High-Frequency Performance of Dual-Gate MoS<sub>2</sub> Transistors Nanomaterials MoS<sub>2</sub> radio-frequency transistors contact resistance dual-gate
author_facet	Qingguo Gao Chongfu Zhang Ping Liu Yunfeng Hu Kaiqiang Yang Zichuan Yi Liming Liu Xinjian Pan Zhi Zhang Jianjun Yang Feng Chi
author_sort	Qingguo Gao
title	Effect of Back-Gate Voltage on the High-Frequency Performance of Dual-Gate MoS<sub>2</sub> Transistors
title_short	Effect of Back-Gate Voltage on the High-Frequency Performance of Dual-Gate MoS<sub>2</sub> Transistors
title_full	Effect of Back-Gate Voltage on the High-Frequency Performance of Dual-Gate MoS<sub>2</sub> Transistors
title_fullStr	Effect of Back-Gate Voltage on the High-Frequency Performance of Dual-Gate MoS<sub>2</sub> Transistors
title_full_unstemmed	Effect of Back-Gate Voltage on the High-Frequency Performance of Dual-Gate MoS<sub>2</sub> Transistors
title_sort	effect of back-gate voltage on the high-frequency performance of dual-gate mos<sub>2</sub> transistors
publisher	MDPI AG
series	Nanomaterials
issn	2079-4991
publishDate	2021-06-01
description	As an atomically thin semiconductor, 2D molybdenum disulfide (MoS<sub>2</sub>) has demonstrated great potential in realizing next-generation logic circuits, radio-frequency (RF) devices and flexible electronics. Although various methods have been performed to improve the high-frequency characteristics of MoS<sub>2</sub> RF transistors, the impact of the back-gate bias on dual-gate MoS<sub>2</sub> RF transistors is still unexplored. In this work, we study the effect of back-gate control on the static and RF performance metrics of MoS<sub>2</sub> high-frequency transistors. By using high-quality chemical vapor deposited bilayer MoS<sub>2</sub> as channel material, high-performance top-gate transistors with on/off ratio of 10<sup>7</sup> and on-current up to 179 μA/μm at room temperature were realized. With the back-gate modulation, the source and drain contact resistances decrease to 1.99 kΩ∙μm at <i>V</i><sub>bg</sub> = 3 V, and the corresponding on-current increases to 278 μA/μm. Furthermore, both cut-off frequency and maximum oscillation frequency improves as the back-gate voltage increases to 3 V. In addition, a maximum intrinsic <i>f</i><sub>max</sub> of 29.7 GHz was achieved, which is as high as 2.1 times the <i>f</i><sub>max</sub> without the back-gate bias. This work provides significant insights into the influence of back-gate voltage on MoS<sub>2</sub> RF transistors and presents the potential of dual-gate MoS<sub>2</sub> RF transistors for future high-frequency applications.
topic	MoS<sub>2</sub> radio-frequency transistors contact resistance dual-gate
url	https://www.mdpi.com/2079-4991/11/6/1594
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Effect of Back-Gate Voltage on the High-Frequency Performance of Dual-Gate MoS<sub>2</sub> Transistors

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