Effect of Annealing Environment on the Performance of Sol–Gel-Processed ZrO<sub>2</sub> RRAM

Effect of Annealing Environment on the Performance of Sol–Gel-Processed ZrO<sub>2</sub> RRAM

We investigate the annealing environment effect on ZrO<sub>2</sub>-based resistive random-access memory (RRAM) devices. Fabricated devices exhibited conventional bipolar-switching memory properties. In particular, the vacuum-annealed ZrO<sub>2</sub> films exhibited larger cry...

Full description

Bibliographic Details
Main Authors: Seunghyun Ha, Hyunjae Lee, Won-Yong Lee, Bongho Jang, Hyuk-Jun Kwon, Kwangeun Kim, Jaewon Jang
Format: Article
Language:English
Published: MDPI AG 2019-08-01
Series:Electronics
Subjects:
sol–gel
ZrO<sub>2</sub>
resistive random-access memory
annealing environment
Online Access:https://www.mdpi.com/2079-9292/8/9/947

Internet

https://www.mdpi.com/2079-9292/8/9/947

Similar Items