Current-Voltage-Temperature (I-V-T) Characteristics of Schottky-Gate of the Structures AlGaN/GaN HEMTs

Current-Voltage-Temperature (I-V-T) Characteristics of Schottky-Gate of the Structures AlGaN/GaN HEMTs

In this study, the forward bias current-voltage-temperature (I-V-T) characteristics of (Mo/Au)–AlGaN/GaN high electron mobility transistors (HEMTs) have been investigated over the temperature range of 100-450K. The barrier height (Fb), ideality factor (n), series resistance (Rs) and shunt resistance...

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Bibliographic Details
Main Authors: M. MOSTEFAOUI, H. MAZARI, S. MANSOURI, Z. BENAMARA, R. KHELIFI, K. AMEUR, N. BENSEDDIK, N. BENYAHYA, J. M. BLUET, C. BRU-CHEVALLIER, W. CHIKHAOUI
Format: Article
Language:English
Published: IFSA Publishing, S.L. 2014-05-01
Series:Sensors & Transducers
Subjects:
AlGaN/GaN
HEMTs
LPMOCVD
I-V-T Characteristics.
Online Access:http://www.sensorsportal.com/HTML/DIGEST/may_2014/Special_issue/P_SI_515.pdf

Internet

http://www.sensorsportal.com/HTML/DIGEST/may_2014/Special_issue/P_SI_515.pdf

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