2-D Design of Double Gate Schottky Tunnel MOSFET for High-Performance Use in Analog/RF Applications

2-D Design of Double Gate Schottky Tunnel MOSFET for High-Performance Use in Analog/RF Applications

In this work, a new structure of Schottky tunneling MOSFET has been designed and simulated. The proposed device structure uses floating gates and dual material main gates to counter short channel effects and to improve RF/Analog figures of merit for low power design applications. The use of floating...

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Bibliographic Details
Main Authors: Shazia Rashid, Faisal Bashir, Farooq A. Khanday, M. Rafiq Beigh, Fawnizu Azmadi Hussin
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Access
Subjects:
2D devices
multiple gate devices
RF applications
Schottky MOSFET
tunnel FET
Online Access:https://ieeexplore.ieee.org/document/9440975/

Internet

https://ieeexplore.ieee.org/document/9440975/

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