Charge trapping-detrapping induced resistive switching in Ba0.7Sr0.3TiO3
Intensive research has been devoted to the resistive switching phenomena observed in many transitional metal oxides because of its potential for non-volatile memory application. To clarify the underlying mechanism of resistive switching, a planar device can provide information that is not accessible...
| Main Authors: | , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2012-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4754150 |