Charge trapping-detrapping induced resistive switching in Ba0.7Sr0.3TiO3
Intensive research has been devoted to the resistive switching phenomena observed in many transitional metal oxides because of its potential for non-volatile memory application. To clarify the underlying mechanism of resistive switching, a planar device can provide information that is not accessible...
Main Authors: | , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2012-09-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.4754150 |
Summary: | Intensive research has been devoted to the resistive switching phenomena observed in many transitional metal oxides because of its potential for non-volatile memory application. To clarify the underlying mechanism of resistive switching, a planar device can provide information that is not accessible in conventional vertical sandwich structures. Here we report the observation of resistive switching behavior in a Pt/Ba0.7Sr0.3TiO3/Pt planar device. Using in-situ scanning Kelvin probe microscopy, we demonstrate that charge trapping/detrapping around the Pt/Ba0.7Sr0.3TiO3 interface modulates the Schottky barrier, resulting in the observed resistive switching. The findings are valuable for the understanding of resistive switching in oxide materials. |
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ISSN: | 2158-3226 |