Evolution of Helium Bubbles and Discs in Irradiated 6H-SiC during Post-Implantation Annealing
The single crystal 6H-SiC with [0001] crystal direction irradiated by 400 keV He+ ions with 1 × 1017 ions/cm2 fluence at 400 °C were annealed at 600, 900, 1200 and 1400 °C for different durations. The evolution of helium bubbles and discs was investigated by transmission electron microscopy. An irra...
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2017-01-01
|
| Series: | Materials |
| Subjects: | |
| Online Access: | http://www.mdpi.com/1996-1944/10/2/101 |