New Approaches and Understandings in the Growth of Cubic Silicon Carbide
In this review paper, several new approaches about the 3C-SiC growth are been presented. In fact, despite the long research activity on 3C-SiC, no devices with good electrical characteristics have been obtained due to the high defect density and high level of stress. To overcome these problems, two...
Main Authors: | , , , , , , , , , , , , , , , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2021-09-01
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Series: | Materials |
Subjects: | |
Online Access: | https://www.mdpi.com/1996-1944/14/18/5348 |