New Approaches and Understandings in the Growth of Cubic Silicon Carbide

New Approaches and Understandings in the Growth of Cubic Silicon Carbide

In this review paper, several new approaches about the 3C-SiC growth are been presented. In fact, despite the long research activity on 3C-SiC, no devices with good electrical characteristics have been obtained due to the high defect density and high level of stress. To overcome these problems, two...

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Bibliographic Details
Main Authors: Francesco La Via, Massimo Zimbone, Corrado Bongiorno, Antonino La Magna, Giuseppe Fisicaro, Ioannis Deretzis, Viviana Scuderi, Cristiano Calabretta, Filippo Giannazzo, Marcin Zielinski, Ruggero Anzalone, Marco Mauceri, Danilo Crippa, Emilio Scalise, Anna Marzegalli, Andrey Sarikov, Leo Miglio, Valdas Jokubavicius, Mikael Syväjärvi, Rositsa Yakimova, Philipp Schuh, Michael Schöler, Manuel Kollmuss, Peter Wellmann
Format: Article
Language:English
Published: MDPI AG 2021-09-01
Series:Materials
Subjects:
3C-SiC
heteroepitaxy
bulk growth
compliant substrates
defects
stress
Online Access:https://www.mdpi.com/1996-1944/14/18/5348

Internet

https://www.mdpi.com/1996-1944/14/18/5348

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