Ionization annealing of semiconductor crystals. Part one: theoretical background
During irradiation of semiconductor crystals with powerful (high current) pulsed high-energy electron beams, a new type of annealing has been obtained. We could obtain new results and to find out physical nature of this phenomenon due to short and powerful bunches of electrons with high energy. Give...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2014-08-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | http://www.tkea.com.ua/tkea/2014/4_2014/pdf/09.pdf |