Surface Energy Driven Cubic-to-Hexagonal Grain Growth of Ge2Sb2Te5 Thin Film

Surface Energy Driven Cubic-to-Hexagonal Grain Growth of Ge2Sb2Te5 Thin Film

Abstract Phase change memory (PCM) is a promising nonvolatile memory to reform current commercial computing system. Inhibiting face-centered cubic (f-) to hexagonal (h-) phase transition of Ge2Sb2Te5 (GST) thin film is essential for realizing high-density, high-speed, and low-power PCM. Although the...

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Bibliographic Details
Main Authors: Yonghui Zheng, Yan Cheng, Rong Huang, Ruijuan Qi, Feng Rao, Keyuan Ding, Weijun Yin, Sannian Song, Weili Liu, Zhitang Song, Songlin Feng
Format: Article
Language:English
Published: Nature Publishing Group 2017-07-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-017-06426-2

Internet

https://doi.org/10.1038/s41598-017-06426-2

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