Single Femtosecond Laser-Pulse-Induced Superficial Amorphization and Re-Crystallization of Silicon

Single Femtosecond Laser-Pulse-Induced Superficial Amorphization and Re-Crystallization of Silicon

Superficial amorphization and re-crystallization of silicon in <111> and <100> orientation after irradiation by femtosecond laser pulses (790 nm, 30 fs) are studied using optical imaging and transmission electron microscopy. Spectroscopic imaging ellipsometry (SIE) allows fast data acqui...

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Bibliographic Details
Main Authors: Camilo Florian, Daniel Fischer, Katharina Freiberg, Matthias Duwe, Mario Sahre, Stefan Schneider, Andreas Hertwig, Jörg Krüger, Markus Rettenmayr, Uwe Beck, Andreas Undisz, Jörn Bonse
Format: Article
Language:English
Published: MDPI AG 2021-03-01
Series:Materials
Subjects:
femtosecond laser
silicon
amorphization
crystallization
spectroscopic imaging ellipsometry
transmission electron microscopy
Online Access:https://www.mdpi.com/1996-1944/14/7/1651

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https://www.mdpi.com/1996-1944/14/7/1651

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