Comparative Study of 2SiC&4Si Hybrid Configuration Schemes in ANPC Inverter

Compared with traditional silicon (Si) power devices, silicon carbide (SiC) devices have attracted extensive attention due to their excellent characteristics. In recent years, the manufacturing process of SiC devices has become more mature, but the cost is still high. Therefore, replacing only some...

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Bibliographic Details
Main Authors: Zhijian Feng, Xing Zhang, Shaolin Yu, Jiacai Zhuang
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Access
Subjects:
Online Access:https://ieeexplore.ieee.org/document/9000840/