Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition

Self-Catalyzed Growth of Vertical GaSb Nanowires on InAs Stems by Metal-Organic Chemical Vapor Deposition

Abstract We report the first self-catalyzed growth of high-quality GaSb nanowires on InAs stems using metal-organic chemical vapor deposition (MOCVD) on Si (111) substrates. To achieve the growth of vertical InAs/GaSb heterostructure nanowires, the two-step flow rates of the trimethylgallium (TMGa)...

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Bibliographic Details
Main Authors: Xianghai Ji, Xiaoguang Yang, Tao Yang
Format: Article
Language:English
Published: SpringerOpen 2017-06-01
Series:Nanoscale Research Letters
Subjects:
Heterostructure nanowire
InAs/GaSb
Self-catalyzed
Crystal structure
Metal-organic chemical vapor deposition
Online Access:http://link.springer.com/article/10.1186/s11671-017-2207-5

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http://link.springer.com/article/10.1186/s11671-017-2207-5

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