Accurate surface band bending determination on Ga-polar n-type GaN films by fitting x-ray valence band photoemission spectrum
The surface band bending in Ga-polar n-type GaN surfaces, as well as the effect of Si doping levels and in situ Ar+ ion processing on band bending, was systematically investigated. To precisely determine the valence band maximum (VBM) of GaN beyond instrumental and material surface environments by X...
Main Authors: | , , , , , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2019-11-01
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Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/1.5120324 |