Accurate surface band bending determination on Ga-polar n-type GaN films by fitting x-ray valence band photoemission spectrum

• Main Authors: Zengli Huang, Ying Wu, Yanfei Zhao, Lin Shi, Rong Huang, Fangsen Li, Tong Liu, Leilei Xu, Hongwei Gao, Yu Zhou, Qian Sun, Sunan Ding, Ke Xu, Hui Yang
• Format: Article
• Language: English
• Published: AIP Publishing LLC 2019-11-01
• Series: AIP Advances
• Online Access: http://dx.doi.org/10.1063/1.5120324

The surface band bending in Ga-polar n-type GaN surfaces, as well as the effect of Si doping levels and in situ Ar+ ion processing on band bending, was systematically investigated. To precisely determine the valence band maximum (VBM) of GaN beyond instrumental and material surface environments by XPS, a valence band feature fitting procedure based on photoemission spectra and theoretical densities of states has been developed. Poisson calculation with quadratic depletion approximation on surface potential has been used to model the band bending and further correct the VBM energy. Then, the actual surface band bending was correctly evaluated. Upward band bending of 1.55 ± 0.03 eV with highly Si doped n-GaN, which is about 0.88 eV higher than that of the moderately doped sample, was found. After in situ Ar+ plasma treatment, the varying degree of band bending was observed distinctly depending on the Si doping density. The surface components associated with the Ga/N ratio and Ga–O bonding concentration on the n-GaN surface have been used to evaluate the contribution to surface band bending.