Accurate surface band bending determination on Ga-polar n-type GaN films by fitting x-ray valence band photoemission spectrum

Accurate surface band bending determination on Ga-polar n-type GaN films by fitting x-ray valence band photoemission spectrum

The surface band bending in Ga-polar n-type GaN surfaces, as well as the effect of Si doping levels and in situ Ar+ ion processing on band bending, was systematically investigated. To precisely determine the valence band maximum (VBM) of GaN beyond instrumental and material surface environments by X...

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Bibliographic Details
Main Authors: Zengli Huang, Ying Wu, Yanfei Zhao, Lin Shi, Rong Huang, Fangsen Li, Tong Liu, Leilei Xu, Hongwei Gao, Yu Zhou, Qian Sun, Sunan Ding, Ke Xu, Hui Yang
Format: Article
Language:English
Published: AIP Publishing LLC 2019-11-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5120324

Internet

http://dx.doi.org/10.1063/1.5120324

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