X-ray photoelectron spectroscopy study of high-k CeO2/La2O3 stacked dielectrics
This work presents a detailed study on the chemical composition and bond structures of CeO2/La2O3 stacked gate dielectrics based on x-ray photoelectron spectroscopy (XPS) measurements at different depths. The chemical bonding structures in the interfacial layers were revealed by Gaussia...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2014-11-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4902017 |