Effects of Oxygen Precursor on Resistive Switching Properties of CMOS Compatible HfO<sub>2</sub>-Based RRAM

Effects of Oxygen Precursor on Resistive Switching Properties of CMOS Compatible HfO<sub>2</sub>-Based RRAM

In this work, we investigate the resistive switching behaviors of HfO<sub>2</sub>-based resistive random-access memory (RRAM) in two different oxidants (H<sub>2</sub>O and O<sub>3</sub>) in an atomic layer deposition system. Firstly, the surface characteristics of...

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Bibliographic Details
Main Authors: Hojeong Ryu, Sungjun Kim
Format: Article
Language:English
Published: MDPI AG 2021-08-01
Series:Metals
Subjects:
memristor
resistive switching
metal oxides
atomic layer deposition
HfO<sub>2</sub>
Online Access:https://www.mdpi.com/2075-4701/11/9/1350

Internet

https://www.mdpi.com/2075-4701/11/9/1350

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