Effects of Oxygen Precursor on Resistive Switching Properties of CMOS Compatible HfO<sub>2</sub>-Based RRAM

Effects of Oxygen Precursor on Resistive Switching Properties of CMOS Compatible HfO<sub>2</sub>-Based RRAM

In this work, we investigate the resistive switching behaviors of HfO<sub>2</sub>-based resistive random-access memory (RRAM) in two different oxidants (H<sub>2</sub>O and O<sub>3</sub>) in an atomic layer deposition system. Firstly, the surface characteristics of...

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Bibliographic Details
Main Authors:	Hojeong Ryu, Sungjun Kim
Format:	Article
Language:	English
Published:	MDPI AG 2021-08-01
Series:	Metals
Subjects:	memristor resistive switching metal oxides atomic layer deposition HfO<sub>2</sub>
Online Access:	https://www.mdpi.com/2075-4701/11/9/1350

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