Magnetoelectric Induced Switching of Perpendicular Exchange Bias Using 30-nm-Thick Cr<sub>2</sub>O<sub>3</sub> Thin Film

Magnetoelectric Induced Switching of Perpendicular Exchange Bias Using 30-nm-Thick Cr<sub>2</sub>O<sub>3</sub> Thin Film

Magnetoelectric (ME) effect is a result of the interplay between magnetism and electric field and now, it is regarded as a principle that can be applied to the technique of controlling the antiferromagnetic (AFM) domain state. The ME-controlled AFM domain state can be read out by the magnetization o...

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Bibliographic Details
Main Authors: Yu Shiratsuchi, Yiran Tao, Kentaro Toyoki, Ryoichi Nakatani
Format: Article
Language:English
Published: MDPI AG 2021-03-01
Series:Magnetochemistry
Subjects:
magnetoelectric effect
antiferromagnetism
Cr<sub>2</sub>O<sub>3</sub> thin film
exchange bias
Online Access:https://www.mdpi.com/2312-7481/7/3/36

Internet

https://www.mdpi.com/2312-7481/7/3/36

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