Magnetoelectric Induced Switching of Perpendicular Exchange Bias Using 30-nm-Thick Cr<sub>2</sub>O<sub>3</sub> Thin Film
Magnetoelectric (ME) effect is a result of the interplay between magnetism and electric field and now, it is regarded as a principle that can be applied to the technique of controlling the antiferromagnetic (AFM) domain state. The ME-controlled AFM domain state can be read out by the magnetization o...
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doaj-fb8d844aacfa4fd8a5d3ea11e60a0b1c2021-03-10T00:04:04ZengMDPI AGMagnetochemistry2312-74812021-03-017363610.3390/magnetochemistry7030036Magnetoelectric Induced Switching of Perpendicular Exchange Bias Using 30-nm-Thick Cr<sub>2</sub>O<sub>3</sub> Thin FilmYu Shiratsuchi0Yiran Tao1Kentaro Toyoki2Ryoichi Nakatani3Department of Materials Science and Engineering, Graduate School of Engineering, Osaka University, Osaka 565-0871, JapanDepartment of Materials Science and Engineering, Graduate School of Engineering, Osaka University, Osaka 565-0871, JapanDepartment of Materials Science and Engineering, Graduate School of Engineering, Osaka University, Osaka 565-0871, JapanDepartment of Materials Science and Engineering, Graduate School of Engineering, Osaka University, Osaka 565-0871, JapanMagnetoelectric (ME) effect is a result of the interplay between magnetism and electric field and now, it is regarded as a principle that can be applied to the technique of controlling the antiferromagnetic (AFM) domain state. The ME-controlled AFM domain state can be read out by the magnetization of the adjacent ferromagnetic layer coupled with the ME AFM layer via exchange bias. In this technique, the reduction in the ME layer thickness is an ongoing challenge. In this paper, we demonstrate the ME-induced switching of exchange bias polarity using the 30-nm thick ME Cr<sub>2</sub>O<sub>3</sub> thin film. Two typical switching processes, the ME field cooling (MEFC) and isothermal modes, are both explored. The required ME field for the switching in the MEFC mode suggests that the ME susceptibility (α<sub>33</sub>) is not deteriorated at 30 nm thickness regime. The isothermal change of the exchange bias shows the hysteresis with respect to the electric field, and there is an asymmetry of the switching field depending on the switching direction. The quantitative analysis of this asymmetry yields <i>α</i><sub>33</sub> at 273 K of 3.7 ± 0.5 ps/m, which is comparable to the reported value for the bulk Cr<sub>2</sub>O<sub>3.</sub>https://www.mdpi.com/2312-7481/7/3/36magnetoelectric effectantiferromagnetismCr<sub>2</sub>O<sub>3</sub> thin filmexchange bias |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Yu Shiratsuchi Yiran Tao Kentaro Toyoki Ryoichi Nakatani |
spellingShingle |
Yu Shiratsuchi Yiran Tao Kentaro Toyoki Ryoichi Nakatani Magnetoelectric Induced Switching of Perpendicular Exchange Bias Using 30-nm-Thick Cr<sub>2</sub>O<sub>3</sub> Thin Film Magnetochemistry magnetoelectric effect antiferromagnetism Cr<sub>2</sub>O<sub>3</sub> thin film exchange bias |
author_facet |
Yu Shiratsuchi Yiran Tao Kentaro Toyoki Ryoichi Nakatani |
author_sort |
Yu Shiratsuchi |
title |
Magnetoelectric Induced Switching of Perpendicular Exchange Bias Using 30-nm-Thick Cr<sub>2</sub>O<sub>3</sub> Thin Film |
title_short |
Magnetoelectric Induced Switching of Perpendicular Exchange Bias Using 30-nm-Thick Cr<sub>2</sub>O<sub>3</sub> Thin Film |
title_full |
Magnetoelectric Induced Switching of Perpendicular Exchange Bias Using 30-nm-Thick Cr<sub>2</sub>O<sub>3</sub> Thin Film |
title_fullStr |
Magnetoelectric Induced Switching of Perpendicular Exchange Bias Using 30-nm-Thick Cr<sub>2</sub>O<sub>3</sub> Thin Film |
title_full_unstemmed |
Magnetoelectric Induced Switching of Perpendicular Exchange Bias Using 30-nm-Thick Cr<sub>2</sub>O<sub>3</sub> Thin Film |
title_sort |
magnetoelectric induced switching of perpendicular exchange bias using 30-nm-thick cr<sub>2</sub>o<sub>3</sub> thin film |
publisher |
MDPI AG |
series |
Magnetochemistry |
issn |
2312-7481 |
publishDate |
2021-03-01 |
description |
Magnetoelectric (ME) effect is a result of the interplay between magnetism and electric field and now, it is regarded as a principle that can be applied to the technique of controlling the antiferromagnetic (AFM) domain state. The ME-controlled AFM domain state can be read out by the magnetization of the adjacent ferromagnetic layer coupled with the ME AFM layer via exchange bias. In this technique, the reduction in the ME layer thickness is an ongoing challenge. In this paper, we demonstrate the ME-induced switching of exchange bias polarity using the 30-nm thick ME Cr<sub>2</sub>O<sub>3</sub> thin film. Two typical switching processes, the ME field cooling (MEFC) and isothermal modes, are both explored. The required ME field for the switching in the MEFC mode suggests that the ME susceptibility (α<sub>33</sub>) is not deteriorated at 30 nm thickness regime. The isothermal change of the exchange bias shows the hysteresis with respect to the electric field, and there is an asymmetry of the switching field depending on the switching direction. The quantitative analysis of this asymmetry yields <i>α</i><sub>33</sub> at 273 K of 3.7 ± 0.5 ps/m, which is comparable to the reported value for the bulk Cr<sub>2</sub>O<sub>3.</sub> |
topic |
magnetoelectric effect antiferromagnetism Cr<sub>2</sub>O<sub>3</sub> thin film exchange bias |
url |
https://www.mdpi.com/2312-7481/7/3/36 |
work_keys_str_mv |
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1724227215510470656 |