Characterization of Series Resistances and Mobility Attenuation Phenomena in Short Channel MOS Transistors
As the scaling proceeds, the transverse electric field increase, and a mobility attenuation phenomenon becomes of primordial interest. Indeed, the high transverse electric field is generally ascribed [1] to surface roughness scattering in the channel and consequently reduce effective mobility of car...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Hindawi Limited
2001-01-01
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| Series: | Active and Passive Electronic Components |
| Subjects: | |
| Online Access: | http://dx.doi.org/10.1155/2001/75780 |