Deposition and Characterization of RP-ALD SiO<sub>2</sub> Thin Films with Different Oxygen Plasma Powers

Deposition and Characterization of RP-ALD SiO<sub>2</sub> Thin Films with Different Oxygen Plasma Powers

In this study, silicon oxide (SiO<sub>2</sub>) films were deposited by remote plasma atomic layer deposition with Bis(diethylamino)silane (BDEAS) and an oxygen/argon mixture as the precursors. Oxygen plasma powers play a key role in the quality of SiO<sub>2</sub> films. Post-...

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Bibliographic Details
Main Authors: Xiao-Ying Zhang, Yue Yang, Zhi-Xuan Zhang, Xin-Peng Geng, Chia-Hsun Hsu, Wan-Yu Wu, Shui-Yang Lien, Wen-Zhang Zhu
Format: Article
Language:English
Published: MDPI AG 2021-04-01
Series:Nanomaterials
Subjects:
SiO<sub>2</sub> thin film
oxygen plasma power
atomic layer deposition
Online Access:https://www.mdpi.com/2079-4991/11/5/1173

Internet

https://www.mdpi.com/2079-4991/11/5/1173

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