Thickness-dependent Raman active modes of SnS thin films

Tin sulfide (SnS) thin films have been reported to show strong layer number dependence on their ferroelectricity and Raman spectra. Identifying the number of layers and stacking structures is crucial for optoelectronic device fabrication. Here, we theoretically study the electronic and phononic prop...

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Bibliographic Details
Main Authors: Itsuki Yonemori, Sudipta Dutta, Kosuke Nagashio, Katsunori Wakabayashi
Format: Article
Language:English
Published: AIP Publishing LLC 2021-09-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0062857