Thickness-dependent Raman active modes of SnS thin films
Tin sulfide (SnS) thin films have been reported to show strong layer number dependence on their ferroelectricity and Raman spectra. Identifying the number of layers and stacking structures is crucial for optoelectronic device fabrication. Here, we theoretically study the electronic and phononic prop...
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doaj-fbd46f557a114a8599b8ac0901108cdb2021-10-06T14:17:12ZengAIP Publishing LLCAIP Advances2158-32262021-09-01119095106095106-610.1063/5.0062857Thickness-dependent Raman active modes of SnS thin filmsItsuki Yonemori0Sudipta Dutta1Kosuke Nagashio2Katsunori Wakabayashi3Department of Nanotechnology for Sustainable Energy, School of Science and Technology, Kwansei Gakuin University, Gakuen 2-1, Sanda, Hyogo 669-1337, JapanDepartment of Physics, Indian Institute of Science Education and Research (IISER) Tirupati, Tirupati 517507, Andhra Pradesh, IndiaDepartment of Materials Engineering, The University of Tokyo, Tokyo, JapanDepartment of Nanotechnology for Sustainable Energy, School of Science and Technology, Kwansei Gakuin University, Gakuen 2-1, Sanda, Hyogo 669-1337, JapanTin sulfide (SnS) thin films have been reported to show strong layer number dependence on their ferroelectricity and Raman spectra. Identifying the number of layers and stacking structures is crucial for optoelectronic device fabrication. Here, we theoretically study the electronic and phononic properties of SnS thin films using first-principles calculations. We identify the characteristic Raman active phonon modes and their dependence on the number of layers and stacking sequences. The clear separation between surface modes and bulk modes is clarified for SnS thin films. In addition, we have clarified the relation between stacking structures and Raman active modes for bilayer SnS. Our results will serve the experimental characterization of such thin monochalcogenide systems through Raman spectra and will expedite their device fabrication.http://dx.doi.org/10.1063/5.0062857 |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Itsuki Yonemori Sudipta Dutta Kosuke Nagashio Katsunori Wakabayashi |
spellingShingle |
Itsuki Yonemori Sudipta Dutta Kosuke Nagashio Katsunori Wakabayashi Thickness-dependent Raman active modes of SnS thin films AIP Advances |
author_facet |
Itsuki Yonemori Sudipta Dutta Kosuke Nagashio Katsunori Wakabayashi |
author_sort |
Itsuki Yonemori |
title |
Thickness-dependent Raman active modes of SnS thin films |
title_short |
Thickness-dependent Raman active modes of SnS thin films |
title_full |
Thickness-dependent Raman active modes of SnS thin films |
title_fullStr |
Thickness-dependent Raman active modes of SnS thin films |
title_full_unstemmed |
Thickness-dependent Raman active modes of SnS thin films |
title_sort |
thickness-dependent raman active modes of sns thin films |
publisher |
AIP Publishing LLC |
series |
AIP Advances |
issn |
2158-3226 |
publishDate |
2021-09-01 |
description |
Tin sulfide (SnS) thin films have been reported to show strong layer number dependence on their ferroelectricity and Raman spectra. Identifying the number of layers and stacking structures is crucial for optoelectronic device fabrication. Here, we theoretically study the electronic and phononic properties of SnS thin films using first-principles calculations. We identify the characteristic Raman active phonon modes and their dependence on the number of layers and stacking sequences. The clear separation between surface modes and bulk modes is clarified for SnS thin films. In addition, we have clarified the relation between stacking structures and Raman active modes for bilayer SnS. Our results will serve the experimental characterization of such thin monochalcogenide systems through Raman spectra and will expedite their device fabrication. |
url |
http://dx.doi.org/10.1063/5.0062857 |
work_keys_str_mv |
AT itsukiyonemori thicknessdependentramanactivemodesofsnsthinfilms AT sudiptadutta thicknessdependentramanactivemodesofsnsthinfilms AT kosukenagashio thicknessdependentramanactivemodesofsnsthinfilms AT katsunoriwakabayashi thicknessdependentramanactivemodesofsnsthinfilms |
_version_ |
1716840576763035648 |